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| PN4355 / MMBT4355 Discrete POWER & Signal Technologies PN4355 MMBT4355 C E C BE TO-92 SOT-23 Mark: 81 B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Collector-Emitter Voltage Value 60 60 10 800 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN4355 625 5.0 83.3 200 Max *MMBT4355 350 2.8 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c) 1997 Fairchild Semiconductor Corporation PN4355 / MMBT4355 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 1.0 mA, I B = 0 IC = 10 A, IE = 0 IE = 10 A, I C = 0 VCB = 50 V, IE = 0 VEB = 5.0 V, VCE = 0 VEB = 4.0 V, I C = 0 60 60 5.0 50 10 100 V V V nA A nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 A, VCE = 10 V IC = 1.0mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 100 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 150 mA, I B = 15 mA IC = 500 mA, I B = 50 mA IC = 1.0 A, I B = 100 mA IC = 150 mA, I B = 15 mA IC = 500 mA, I B = 50 mA IC = 1.0 A, I B = 100 mA IC = 500 mA, VCE = 0.5 V IC = 1.0 A, VCE = 1.0 V 60 75 100 75 75 400 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage 0.15 0.50 1.0 0.9 1.1 1.2 1.1 1.2 V V V V V V V V SMALL SIGNAL CHARACTERISTICS Cobo Cibo hfe NF Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure VCB = 10 V, I E = 0, f = 1.0 MHz VEB = 0.5 V, I C = 0, f = 1.0 MHz I C = 50 mA, VCE = 10 V, f = 100 MHz I C = 100 A, VCE = 10 V, RS = 1.0 k , f = 1.0 kHz, BW = 1.0 Hz 1.0 1.0 30 110 5.0 3.0 dB pF pF SWITCHING CHARACTERISTICS ton toff Turn-On Time Turn-Off Time IC = 500 mA, VCC = 500 mA IB1 = I B2 = 50 mA 100 400 ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 1.0% |
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